| Zinc Oxide is a wide direct band gap semiconductor material which is consider as a promising materials in high-performance UV detection device, beceasure it's photoconductivity is high in the ultraviolet properties,epitaxial growth temperature is low. UV detectors can be widely used in scientific research, military, space, environmental protection and other fields. In this paper, effects of different conditions on film structure and properties during magnetron sputter plating were studied. Then, ZnO-based photoconductive ultraviolet detector was prepared through evaporated Al/Au contact electrode by electron beam evaporation, and its performance was characterized. The summary of contents and results are folowed.(1) Effects of substrate temperature on ZnO thin film structure and optical properties were researched. ZnO showed a spherical shape, particle size increased, the body carrier concentration increased, and mobility and resistivity decreased with substrate temperature. When the substrate temperature was 600℃, carrier concentration up to 3.465x1019/cm3, mobility and resistivity minimum was 0.8051cm2,v·s,0.238Ωcm, as membrane defects and internal stress of the substrate temperature of 600℃and the maximum band gap 3.28eV.(2) Effects of sputtering power on ZnO film structure and optical properties were researched. when the power is 130W, ZnO thin films the most uniform particle size, XRD diffraction peak width at half the narrowest, carrier concentration, resistivity minimum were 4.52x1016/cm3 and 4.85Ω·cm, mobility maximum 17.68cm2/v·s, the power of the band gap has little influence.(3) Effects of working pressure on ZnO film structure and optical properties were researched. As the sputtering pressure increases, the preparation of ZnO thin film of particles of first increase and then decrease. When the sputtering pressure in 1.5Pa, ZnO thin films the most uniform particles, the most compact structure, when the pressure is 1.0Pa, the prepared film stress minimum 0.9259GPa, when the sputtering pressure is 1.5Pa, the half-width minimum, maximum grain size of films 18.4nm, prepared ZnO thin films in the visible range with good transmission properties, good UV absorption band, the greatest band gap in 2.0Pa is 2.5eV.(4) Effects of annealing temperature on optical properties of ZnO thin films were researched. with the increase of annealing temperature, the ZnO thin films particle size increases, half width gradually decreased, crystallinity gradually changed for the better, as the annealing temperature higher the resistivity and the mobility firstly increases and then decreases, physical carrier concentration increases and then decreases.(5) The effect of different interdigital structure on the properties of UV detectors was studied, ZnO-based MSM photoconductive UV detector was prepared by evaporating Al/Au electrodes inserted by electron beam evaporation, its performance was tested. And the internal mechanism was discussed. It was found that metal Al and ZnO can form a good ohmic contact, the detector bias in the 3V significantly under the UV response to wavelengths in the UV responsiveness of 6.37A/W. And the smaller distance between the electrode, the shorter response time.
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