| The TiAlN films and ZnO films were deposited by a reactive magnetron sputtering system. The Al percentage in the TiAlN film changes with the Al sputtering power. The increase of Al sputtering power resulted in the increase of deposition rate and Al contents in the film, and the decrease of the film roughness. It was found that the hardness and elastic modulus of TiAlN film was higher than that of TiN film at low Al percentage (about 21%), but became lower at high Al percentage (>26%).ZnO films were deposited using different oxygen partial pressure. The transmission spectra of all films were analyzed. The refractive index dispersions of different films are different and the refractive index of the ZnO film has strongly dependence on the oxygen partial pressure. Such kind of difference could be explained by Single electronic oscillator model. By using this model, different Ed could be found as the reason of causing different refractive index dispersion. Because of E_d = βN_cZ_aN_e, N_c is the coordination number of the cation nearest neighbor to the anion, Z_a is the formal chemical valency of the anion, and N_e is the total number of valence electrons per anion, so β determined E_d value in the same material. The different β means different chemical bond condition. Furthermore , XRD show that all ZnO samples are all (002)-oriented, but the diffraction peaks were not very symmetrical. Film internal stress could be the reason of the asymmetrical. The interplaner spacing could be calculated by using the diffraction peak position and the spacing increased when the oxygen percentage increased. At last, the analysis of the film properties show that the band gap of the ZnO film are relation to the grain size. Both the film thickness and internal stress affected the grain size.
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