The Performance Research Of Fe-Co Co-doped Si Flim

As we know,electron has two characteristics:charge and spin.In the traditional micro-electronics,the electron transport process is only its electric charge which is controled by the electric field,and its spin is not taken into account.Spintronics is one to study the electronic transport properties of spin-polarized as well as those based on the characteristics of the design,development of new electronic devices to the main content of a cross-disciplinary.With the development of science in a variety of semiconductor spin-polarized carriers,such as the spin of carriers,the spin from magnetic doping atoms,the nuclear spin of atoms from the semiconductor elements and so on,which have attracted scientists'.extensive attention.These studies of the spin naturally led to the emergence of spintronics of semiconductor.Spintronics of semiconductor includes two fields:one is magnetic semiconductor electronics,including magnetic semiconductors or complex of semiconductor and magnetic materials.The other is the semiconductor quantum spin electronics,it mainly refers to the quantum mechanical properties of spin in semiconductor applications.At present,the main researches of diluted magnetic semiconductors focus onⅡ-Ⅵ,Ⅳ-Ⅵ,Ⅲ-Ⅴcompound,however,these compounds are not cubic symmetry,it is difficult to exist them with Si-based integrated micro-electronic devices.Considering the current status of the application of the dominant Si-compatible electronic devices,it is expected to develop diluted magnetic semiconductors by doping transition elements into groupⅣ,whereas it is limited by the low solution of transition metal element in Si.In the field of spintronics,the semi-metallic material with high-spin-polarized electron source is also considered a better candidate material.M.A.Chernikov et al proposed the adoption of Co into FeSi narrow-band semiconductor,could achieve Co, Fe replacement and found that compounds FeCoSi metal-insulator transition was at x =0.02.NCHOLU MANYALA and others report the discoverythat the bulk metallic magnets derived from doping thenarrow-gap insulator FeSi with Co share the very highanomalous Hall conductance of(GaMn)As,while displaying Curie temperatures as high as 53 K.and this effect is intrinsic and likely the influence from band structure rather than the proliferation of impuritiesIn our works,we prepared two series of FeCoSi thin films on the glass substrate by magnetron sputtering.The first kind of samples is made by co-depositing(FeCo), Si materials。The structure of these thin films are amorphous,measured by XRD.The surface morphology of the samples are uniform and smooth,showed by AFM figures, and the doping concentration of(FeCo) increases,the roughnesses of samples increase,when the content of(FeCo) is 20%,40%,45%,50%,the sample roughness is 1.87,2.03,2.57,17.16nm,respectively.It is found that(FeCo)_0.4Si_0.6 shows weak ferromagnetism at room temperature measured by AGM and the coercivity is 61.784Oe;the other samples show paramagnetics,the Hall effect of samples is measured using transport measurement system built by ourselves at room temperature. The results showed that the Hall effect of our sample is not obvious.we think this was caused by the high concentration of(FeCo) and the weak magnetisem of(FeCo)_0.4Si_0.6The second kind of samples prepared by co-sputtering Fe,Co,Si materials.The results of XRD measurements were as same as those of the first kind of samples.They were all in amorphous state.It is found that the surface morphologyof Fe:Co:Si cosputtering films showed more uniformly compared with(FeCo) Si co-sputering films,and the roughness of the sample reduced with the concentration of Fe:Co.The magnetic properties of the samples measured by AGM at room temperature showed that the thin films are paramagnetic.