Study On Preparation And Photoluminescence Properties Of Nc-SiC-Rich SiO₂ Films

In this paper,brief introduction on structure,theory,preparation technology,status and development trend of the SiC material were shown.A reactive sputtering with the radio frequency sputtering technique was applied to prepare nc-SiC-rich SiO₂ films couple with phase separation technique.Then fourier transform infrared spectroscopy(FTIR) and photoluminescence spectroscopy(PL) were measured to assist academic research on the process of film growth and the luminescence mechanism of the films.First,The films of SiC_X were deposited in the reaction chamber with the gas acetylene(C₂H₂) and methane(CH₄) separately mixed with argon(Ar) as reaction gases. Then the phase separation as " SiC_X→xSiC +(l-x)Si " occurred as the films were annealed at 1100â–¡in N₂ atmosphere.The optimalizing parameters for the films deposition follow-up was determined in this step.Then the gas oxygen(O₂) was choosed in variable amounts with argon as reaction gases in oder to prepare the films of SiO_X.The phase separation as " 2SiO_X→(2-x)Si + xSiC₂ " occured when annealed at 1100℃in N₂ atmosphere.PL spectra of the nc-Si at about 880nm had been observed in the films.Based on the preparation of nc-Si-rich SiO₂ films,O₂ and CH₄ were added into the reaction chamber with Ar at the same time.When the films annealed at 1100â–¡in N₂ atmosphere.The phase separation as " SiC_XO_y→a-SiO₂ +β-SiC " occurred.We prapraed the nc-SiC-rich SiO₂ films which showed a strong photoluminescence at about 565nm.We ascribed the luminescence to the nc-SiC,and for simplicity's sake we also put forward " SiC_X→xSiC +(l-x)Si " or " SiC_X→xSiC +(l-x)Si " to explain the process of films growth and the luminescent phenomenon.