Study On Preparation And Photoluminescence Properties Of Wavelength-controlled Nc-SiC Quantum Dot

ABSTRACT:In this paper, brief introduction on structure, theory, preparation technology, status and development trend of the SiC material were shown. A reactive sputtering with the radio frequency sputtering technique was applied to prepare nc-SiC riched SiO2 films couple with phase separation technique. Then fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL) were measured to assist academic research on the process of film growth and the luminescence mechanism of the films.Firstly, the phase separation as "SiC+O2→SiCxOy" occurred as the films of SiCxOy were deposited in the reaction chamber with the gas oxygen (O2) mixed with argon (Ar) as reaction gases. Then the phase separation as "SiCxOy→nc-SiC+SiO2 " occurred as the films were annealed at 900℃in N2 atmosphere.And then, depositing and annealing conditions was researched Based on the preparation of nc-SiC riched SiO2 films, and the best substrate temperature and annealing temperature and time is 500℃and 900℃and 1h.At last, PL spectra of the nc-Si from 445nm to 630nm had been observed in the films with changing the gas oxygen (O2).