Study Of The Fabrication Of VO₂ Thin Film And W-Doped VO_x Thin Film In Air Atmosphere

Vanadium oxide(VOP₂) is a phase change oxide.It has metal-insulator transition(MIT) property,which shows abrupt changes in electrical and optical properties.VO₂ thin film have a bright application future in many fields such as intellectual window which can change the temperature automatically,laser protective film,infrared detector,optical data shortage material. There are over ten valence states of Vanadium.So the process to fabricate VO₂ thin film is very rigor.The techniques to fabricate VO₂ nowadays are just in a few fields and the cost is very high. To simplifies the process and reduce the cost is now attracted many attentions.The phase change temperature of pure Vanadium oxide(VO₂) is around 68℃,a little higher than room temperature,which localized it's application field.Many researches have proved that impurity doping can reduce the phase change temperature.So to develop a VO₂ fabricating technique that can suitable for impurity doping has become the hot research topic.In this paper,high purity VO₂ thin film was obtained though oxidizing the metal Vanadium thin film in air and controlling the oxidizing time and temperature.In order to know if this technique is also suitable for impurity doping,Wolfram is doping into the film and obtained a good effect.A effective doping technique was obtained through analyzing.The second part of this paper discussed the problems confronted in repeating the traditional sputtering method.And the technique method of this paper was pointed out.The third part of this paper introduced the air oxidizing method to fabricate VO₂ thin film. The oxidizing process is analyzed and the proper oxidizing temperature to fabricate VO₂ thin film is obtained.The method to control oxidizing time is also introduced.In addition,the effect of the density of the metal Vanadium to the property of VO₂ thin film was investigated.Wolfram doping experiment is introduced in the fourth part of this paper.Wolfram-Vanadium -metal(W-V-metal) film is firstly obtained by doping Wolfram into Vanadium-metal and thermal diffusion of Wolfram during oxidizing.The method to increase the doping content by using multilayer impurity film was pointed out by analyzing the effect of monolayer impurity film to the doping content.