Font Size: a A A

Preparation And Luminescence Properties Of RE3+(RE=Eu, Tb) And Ga3+ Co-doped SiO2 Materials

Posted on:2009-06-11Degree:MasterType:Thesis
Country:ChinaCandidate:Z Y YuFull Text:PDF
GTID:2120360245951689Subject:Optics
Abstract/Summary:PDF Full Text Request
In Cathode Ray Tube and Tri-phosphor, Cathode Ray Tube lacks blue fluorescence especially. RE3+(RE=Eu, Tb) and Ga3+ co-doped SiO2 materials were prepared by sol-gel method and the structure of the materials were investigated by IR and XRD. The results indicate that materials were in amorphous phase and SiO2 net structure was still observed in annealed samples, the doped concentration of RE3+ and Ga3+ were too low to influence the SiO2 network structure. The three dimension fluorescence spectra, excitation and emission spectra were used to characterize the RE3+ and Ga3+ co-doped SiO2 luminescent materials. The results indicate that the three dimension fluorescence spectra were according with excitation and emission spectra. In Ga3+ and Eu3+ co-doped SiO2 materials, it is approve that 400℃annealed sample excited by 393 nm showed the characteristic emission of Eu3+ at 576 nm(5D0-7F0), 588 nm(5D0-7F1), 612 nm(5D0-7F2). And it is found that emission from 5D0-7F1 quenches with high temperature. Doped with Ga3+ can be made the sample radiate blue fluorescence at 460 nm. It has less influence with emission intensity of Eu3+ but has great effect with blue fluorescence intensity of Ga3+ when sample exited by 270, 290, 318 and 380 nm. So materials can be made to radiate different color fluorescence by varying excitation wavelength. In Tb3+ and Ga3+ co-doped materials, the three dimension fluorescence spectra confirm the emission wavelength of 544 nm and excitation wavelength of 230 nm. When excited by 230 nm, 5D4-7FJ(J=4,5,6) and 5D3-7F6 transition were obtained in emission spectra. It is found that emission from 5D3-7F6 quenches with high temperature. 5D4-7F6 and 5D4-7F5 transition of sample were all activated, but induce the intensity of blue fluorescence at 460 nm. In order to investigate the influence factors of luminescence intensity, annealing temperature, Ga3+ ions and RE3+ ions concentration in RE3+ and Ga3+ co-doped silicate materials were discussed, respectively.
Keywords/Search Tags:sol-gel method, RE3+(RE=Eu, Tb), Ga3+, SiO2 luminescence materials, luminescent properties
PDF Full Text Request
Related items