| In modern times, information display becomes more and more important. The display device based on cathode ray tubes (CRTs) is the earliest information display device, and possesses the highest performance compared with its price. The field emission display (FED), as flattened CRT, would be the successor of CRT.Field emission cathode is the key object of the field emission display. A basis way to develop a high efficiency field-emission cathode is to well understand the field emission mechanism. But so far, the field emission mechanism of metal is the only one which can be well described by Fowler-Nordheim theory. However other materials such as semiconductor, nano-materials, sometimes do not follow the Fowler-Nordheim theory. Among the semiconductor materials, silicon is the most known well. Investigation of the filed emission characteristic of silicon will be helpful to understand the deep sight of field emission mechanism of semiconductors. Electron energy distribution of field emission is a powerful tool to explore the field emission mechanism.In this thesis, the electron energy distribution of field emission from n-type silicon is calculated based on the theory of electron energy distribution of metals combined with band theory of semiconductor. The distribution of the electric field of metal tip is calculated by finite element method first. Then an approach to the same case of silicon tip was achieved. According to the distribution of the electric field, the band bending of conductive band of n-type silicon was calculated. Combined the band bending of silicon with the electron energy distribution of metals, the electron energy distribution of silicon was obtained. The parameters that influence the band bending such as temperature, permittivity and doping dose were discussed. The calculation result of electron energy distribution of silicon is coincident with that of the experimentally observed. Also the disagreement between experimental and calculated result was discussed.
|
PDF Full Text Request