The Influence Of Field Penetration To N-type Silicon Field Emission Electron Spectroscopy

Display technology have been turned to the flat panel devices and the field emission display (FED) is of the platen cathode ray tube display (CRT).There are some advantages in FED such as high resolution, good color reproduction, high contrast ratio, fast response, et al. The key technology within FED is the field emission electron source, the cathode technology. Researching a cathode material which favorable to the field emission is an important way to reduce the cost. Field emission electron source based silicon material has compatibility with the microelectronic devices and then is very meaningful. The principle mechanism of field emission from semiconductor as silicon is the base to further development of efficient field emission cathode. Field emission electron energy spectrum contains a lot of physical information about field emission and is a powerful tool for analysing field emission mechanism.By numerical simulation, the electric field penetration and electronic band structure of the n-type silicon were calculated.In this article, first we use the mode of simulation to study of n-type silicon micro-tip. Involve in the internal potential distribution, electric field distribution and charge density distribution of field emission tip. moreover the connection doping concentration,temperature change,the gate voltage with the internal potential and band bending are systematic studied The influence of the micro-tip surface band bending by electric field penetration is discussed. We find Surface band bending by field Penetration will lead to the field emission electron spectroscopy shift to the low energy side. The calculated result correspond the experimental results basically.Secondly, we use PWSCF method in first-principles calculation software package simulate band structure and density of states of silicon. And Combining the results of field penetration discussed silicon energy spectrum of the field emission. We find the phenomenon of field penetration will rise to field emission of other conduction band electrons and lead to field emission spectrum appear multi-peak structure. Display technology have been turned to the flat panel devices and the field emission display (FED) is of the platen cathode ray tube display (CRT) .There are some advantages in FED such as high resolution, good color reproduction, high contrast ratio, fast response, et al. The key technology within FED is the field emission electron source, the cathode technology. Researching a cathode material which favorable to the field emission is an important way to reduce the cost. Field emission electron source based silicon material has compatibility with the microelectronic devices and then is very meaningful. The principle mechanism of field emission from semiconductor as silicon is the base to further development of efficient field emission cathode. Field emission electron energy spectrum contains a lot of physical information about field emission and is a powerful tool for analysing field emission mechanism.By numerical simulation, the electric field penetration and electronic band structure of the n-type silicon were calculated.In this article, first we use the mode of simulation to study of n-type silicon micro-tip. Involve in the internal potential distribution, electric field distribution and charge density distribution of field emission tip. moreover the connection doping concentration,temperature change,the gate voltage with the internal potential and band bending are systematic studied The influence of the micro-tip surface band bending by electric field penetration is discussed. We find Surface band bending by field Penetration will lead to the field emission electron spectroscopy shift to the low energy side. The calculated result correspond the experimental results basically.Secondly, we use PWSCF method in first-principles calculation software package simulate band structure and density of states of silicon. And Combining the results of field penetration discussed silicon energy spectrum of the field emission. We find the phenomenon of field penetration will rise to field emission of other conduction band electrons and lead to fileld emission spectrum apprat multi-peak structure.