Fabrication And Physical Properties Of Silicon-Based Silica Film Materials

Based on the research development of silicon-based silica films, characteristic methods, research methods ,this paper focuses on depositing silicon-based silica films by thermal oxidation method and plasma enhanced chemical vapor deposition (PECVD) system ,promotes new technology of such films, and meanwhile, analyzes and studies the properties of the films, at last, sums up the conclusions and makes some improvements.SiO₂ films are deposited on silicon substrate by thermal oxidation method in this paper: And in Qingdao Sairuida MR13 diffusion furnace of different experimental conditions the silicon-base is solidified in air atmosphere and we obtain symmetrical, compact and amorphous silica whose thickness is 618(?).Finally,the silica films are characterized by atomic force microscopy(AFM),X-ray diffraction(XRD),X-ray photoelectron spectrum(XPS) and step tester in order to analyze the structure, morphology, composition and chemical proportion.At the same time I studied the plasma enhanced chemical vapor deposition (PECVD) craftwork, and I designed the experiment method.Through the study of this paper, we get some achievements. But we can see that depositing silicon-based silica films by thermal oxidation method and plasma enhanced chemical vapor deposition (PECVD) system still need further study and improvement in technics including deposition conditions, the ways of annealing and.