Preparation And Characterization Of PZT Ferroelctric Thin Films

In this thesis, PZT ferroelectric thin films including monolayer Pb(Zr1-xTix)O3 (PZT) films and multilayer films consisting of alternating Pb(Zr0.8Ti0.2)O3 and Pb(Zr0.2Ti0.8)O3 layers were prepared by magnetron sputtering. PZT thick films were prepared on Pt/Ti/SiO2/Si by the modified sol-gel techniques. The whole article mainly included following content: the effect of different substrates, different atmosphere of Ar:O2 and substrate temperature on the microstructure and properties of PZT films; the characterizations of the microstructure, component, morphology of monolayer, multilayer PZT films and PZT thick films by using XRD,SEM,AFM,XPS,and EDAX; the electrical properties of PZT films were measured by TH-2816 digital electric bridge and Radiant Precision Ferroelectric Measurement System (Precision Workstation Tester, USA),1,The ratio of mismatch between PZT and Pt or PZT and Si is 4.78% or 31.7%, respectively. It is an easier way to prepare PZT films on Pt substrate than on Si and SiO2/Si substrate. It is found that PZT films deposited on Si and SiO2/Si substrate have many cracks. However, PZT films deposited on Pt-coated Si substrate have good microstructure with smooth surface, no cracks and well-distributed grains.2,The PZT films with higher perovskite phase were obtained by depositing at the 300℃of substrate temperature in pure Ar atmosphere, and then annealed in air by using conventional furnace annealing (CFA). For a mixture of Ar and O2atmosphere, PZT films deposited by sputtering were difficult to transform into pure perovskite structure. The more O2 in sputtering atmosphere, the lower content of perovskite structure is in PZT films.3,PZT films were in situ deposited at 550℃,600℃and 650℃. It is found that PZT films only prepared at 600℃can transform into pure perovskite structure. The morphologies of PZT films in situ prepared at 550℃,600℃and 650℃were measured by using AFM method. The surface roughness mean square (rms) of PZT films is 2.6 nm,5.2 nm and 9.0 nm, respectively at the scanning size of 500nm×500nm. The average grain sizes of PZT films is 22.8nm,24.6nm and 49.3 nm, respectively. The results indicate that the grain size and RMS values gradually increased with the increasing of substrate...