Study On PZT Ferroelectric Thin Films Prepared By Sputtering Powder And Ceramic Targets With Various Zr:Ti Ratios Deposited On Ag,Au,Pt Electrodes

Pb(Zr,Ti)Os (PZT) is a kind of ferroelectric materials, whicheXhibits high value of dielectfic constant, spofltaneous polariZtion ps,moduli dij of piezoelectricity and electromechanical couPlingcoefficient .If the electric properties of PZT ferroelectric can be keptWhen PZT is made in the form of thin film,we can downsize theelectronic components and PZT thin films will be used extensively inmany aPplications (e.g. actuators, sensors ).This paPer investigates the fabricating process and electricproperties of PZT thin films deposited by r. f sputtering for the purposeof decreasing the annealing temperature and improving the electricproperties. The whole work includes f improving fabricating technique oftarget; investigating different annealing temperature and electficproperties of PZT thin film on the condition that the films are depositedon the three kinds of electrode (incIuding Ag, Au, Pt) and on thecondition that the Zr:Ti concefltration ratios aredifferent(30f70,53 f47,70f30) and on the condition thdt the ceramics targetis changed into powder target, investigating fabricating technique ofbottom electrodes (including Ag, An, Pt) formed by evaPoraton.The result indicates f PZT target can be fabricated not using themethod of hot-press and not adding bond, Pt electrode can be made byevaporation, the annealing temperature of PZT thin film on Ag electrodeis lower than on Au and on Pt electrode, when the Zr;Ti concefltfationratio is 30f70, the crystal temperature is the lowest, PZT thin film madeby powder target can decrease the annealing temPerthee effectively.