The Biological Effects Of HVEF On Streptomyces Aureofaciens Implanted With N～+ions Beam

Low-energy ion implantation has been considered as a new kind of mutation breeding and foreign gene delivery techniques.By the means of implanting low-energy ions into, organisms, the biological effects and the function mechanisms of the technique are investigated by some researchers. In our experiments, we choose the Streptomyces aureofaciens as the target. Base on N low-energy ion implantation, we observe and counte the biological effects of HVEF on streptomyces aureofaciens implanted with N⁺ ions beam. Further more, we revealed some basic mechanisms.First of all, by studied its character of beaming the implantated with N⁺ ions,we count the biological survival rate and mutagenic effects of the Streptomyces aureofaciens. Then we ascertaind the best conditions: energy is 10kev, doses is 70×2.6×10¹³N⁺/cm².Under this conditions, the positive mutational rate was 22%.Then we discuss the survival rate of Streptomyces aureofaciens irradiating by HVEF with different intensity and for different time. The results show that under the dose of 20s×0.5kv/cm, high-voltage electrostatic field can give rise to an obvious activation on germination. Comparied with the comparison, the survival rate is 124%. In other conditions, the factor of destroying bacterium are influes by HVEF, the survival rate decreases.In this paper, we chiefly discussed the biological effects of HVEF on Streptomyces...