Investigation Of The Radiation Damage Of A New PIN Semi-conduct Detector

PIN silicon detectors have a lot of good properties, and are often used in nuclear physical experiments. But all kinds of radiation damage defects may be induced while the semi-conduct detectors are radiated by high energy particles, which cause negative influences to the detectors, for example, the resolution will turn bad, the forward and backward electric resistances will fall down, the leakage currents will increase, and non-linearity will increase.A new type of PIN silicon semi-conduct detector was studied in this paper. The radiation damage mechanics of semi-conduct materials under all kinds of particles was investigated. It was also studied how the micro-defects of radiation damage affect electrical parameters of the detectors, and how the resolution change with the radiation dose under the radiation of different energies protons. Because this PIN detector is mainly used to measure the proton-recoil spectrum of fast neutron, the influence of proton radiation to the detector properties was studied mostly. It was found the total radiation doses under low and higher energies protons were 5×10p/cm~2 and 7.2×l0~9p/cm~2, while the PIN detector turned bad, and the resistance of proton radiation of the junctions was inferior to the compensating parts.