| Silicon oxide/Fluorinated amorphous carbon/Silicon oxide multiple-layered films and one-layered Fluorinated amorphous carbon films were prepared using Microwave electron cyclotron chemical vapor deposition (ECR-CVD) reactor with SiH4, O2, CHF3 and CH4 as source gas and were annealed in nitrogen ambience in order to investigate their thermal stability. The thickness of films was measured by a profilometer (ET350, Japan) before and after annealing and the optical transmission spectrum was obtained by a Ultraviolet-Visible (UV-VIS) spectrophotometer (-17,PklinElmer) and optical bandgap was calculated. The bonding configurations and element of the films were analyzed by a Nicolet 550 Fourier-transformed infrared spectrometer (FTIR) as well as X-ray photoelectron spectroscopy(XPS). The dielectric constant were examined by capacitance-voltage (C-V) characterization. We mainly discussed the bonging configurations and element of the SiOx/a-C:F/SiOx multiple-layered films, and the difference from one-layered films before and after annealing.It indicated that the multiple-layered films were mainly composed by C-F, C=C and Si-O bonging, a little Si-C and Si-F bonding were also existed because of history effect. The bondgap were calculated as 2.7eV. The dielectric constant of the multiple-layered films was close relative to the thickness of the covering layer-SiOx, so the thickness had better be reduce. The bonding configurations of multiple-layered films had no evident changes after 400癈 annealing, the thickness raise very little and the dielectric constant increase 8%. Compared with one-layered a-C:F films prepared in the same conditions, the SiOx/a-C:F/SiOx multiple-layered films had a better thermal stability.
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