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A Physical Insight Into Vapor Dynamic Process Of Diamond Growth At Low Temperature Via EACVD

Posted on:2003-08-18Degree:MasterType:Thesis
Country:ChinaCandidate:H L XinFull Text:PDF
GTID:2120360122961081Subject:Optics
Abstract/Summary:PDF Full Text Request
Based on the theory of glow discharge, the electron transport process in non-uniform electric field has been successfully simulated by adopting Monte Carlo method in the work. What plays an indispensable role during the simulation is the 'null-collision' technique and the renormalization procedure which maps the test-particle assembly into another consisting fewer test-particles. The avalanche of electrons is taken into account and the distributions of all kinds of charged particles are applied in obtaining the electric field that is more closed to the fact. Subsequently the variation formula of the electric field is speculated. Under certain of biases and pressures, the results indicate, near the anode there is a reverse electric field that will act as an accelerating factor during the diamond growth at low temperature.All of the above conclusions provide some reference for the study of the vapor dynamic model of the diamond film growth at low temperature via EACVD.
Keywords/Search Tags:Diamond film, Monte Carlo simulation, EACVD, Vapor dynamic model
PDF Full Text Request
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