| Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting Monte Carlo method. The doping process of n-type diamond film is investigated by this method for the first time. The results indicate: 1) The scattering angle of electrons near the substrate is mainly lange-angle, which is helpful to grow diamond film over a large area when glow discharge is kept; 2) After considering the recombination process, the number of particles distribution is provided. It shows that the particle number will fluctuate with the recombination coefficient; 3) The dynamic process of the n-type doped diamond film is simulated. The particle distributions of S, S+ and Ar+ are gotten. The result has important reference to the investigation of n-type diamond film doping at low temperature.
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