Preparation Of Super-hard Amorphous Carbon Film By Pulsed Laser Ablating Graphite Target

Super-hard amorphous carbon films were deposited on such substrates as single-crystalline silicon and K9 glass by pulse laser ablating graphite target. Laser with wavelength of 532nm,duration time about 10ns and repeating frequency 1 or 5Hz was used. The charter I introduced the schematics of the experimental setup, the model of pulsed laser ablating solid target (S-N model) and the subplantation model for film growing proposed by Y.Lifshitz. Ion-assisted bombardment and direct current bias were emphasized in charter II and charter III respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film. In charter II, the data of SEM, X-ray diffraction and Raman spectroscopy were used to characterize the structure of a-C. In charter III, the author designed a set of direct current bias and a schematics for measuring signal, by which the character of conduction of the laser plasma in electrical field caused by bias was studied. The influence of adjusting the laser spot size at the target on the growth of a-C was analyzed in charter IV, and a suit spot size was found. The charter V studied the absorption character ultraviolet and infrared light for a-C films on both glass and single crystalline silicon. Though amorphous carbon had quite lower absorption, it was suit to be made as a transmittance-increasing layer on silicon in range of wavelength shorter than 8μm.