Study On Synthesis And Doping Properties Of C-BN Films

In this paper, using r. f. sputtering method, the cubic boron nitride films (c桞N films) of 90% content were deposited on the substrate of crystaline silicon by improving technology parameters ; besides, firstly in the world we explored the method of synthesizing n梔oped BN films by mixing the vapor of sulphur into sputtering gases, which leads to the decrease of 4 magnitudes in the resistance of BN films. The resistance is between 103條O5Qcm. The FTJR spectroscopy and AFM morphology of c桞N films are given in the dissertation0 Also in the first time, we tested the I梀 curve, C梀 curve, FTIR and AES(Auger Electron Spectroscopy) of n梔oped BN films prepared by r. f. sputtering method. According to the computation, the dopant content of BN films is about 3X10?cm~. From the I梀 curve, the reversed threading voltage of p桽i/n桞N heterojunction is found to be about 15V, and by immitating these I梀 curves, the structure of the energy in doped BN films was estimated. At last, it was shown by AES that the contents of carbon and oxide are very high on the surface of the samples and the atomic ratio of B,N,O is 10 :4. 4: 1.