| More and more attention has been paid to ferroelectric thin films such as poly(vinylidene flouridetrifluoroethylene) copolymers, because of their advantages compared with inorganic materials like lower switching voltage, lower annealing temperature, easier fabrication process, higher dielectric constant, and cheaper cost. In the first part of this thesis is a general introduction on organic ferroelectric material; second part systematically discusses the related influence factors; the research we published before have demonstrated that the ferroelectric properties can be improved substantially by using interlayer such as poly(3,4-ethylene dioxythioohene)-poly(styrene sulfonic) acid (PEDOT-PSSH) to form a "sandwich" device structure, thus, the third part is focused on finding out the mechanism of the structure which is essential for our research work to move on in the further time. During the experiment process, by alternating the proportion of the PEDOT and PSSH of the interlayer material, and introducing another material Poly(vinylphosphinc Acid) (PVPA) as interlayer, we get serials of data which imply that it is the proton in the PSSH or PVPA which can supply enough charge to stabilize ferroelectric domain that plays the vital role in enhancing ferroelectric property. In the following two parts, the paper shows that the PVDF copolymers and terpolymer has indicate to be potential materials for applications like ferroelectric memory and capacitor in the future.
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