| In recent years,with the growing demand for high-data-rate wireless communication systems,there has been a rapid evolution of the Fifth Generation(5G)mobile communication technology and a steady development of the Sixth Generation(6G)mobile communication technology.Compared to RF/microwave bands,millimeter-wave(mm-Wave)bands offer several advantages,including higher data rates,lower latency,and greater network capacity.Phased array technology exhibits highly directional gain characteristics,which can compensate the path loss in mm-Wave communication and increase signal coverage.This dissertation focuses on addressing the challenges faced by5G/6G mm-Wave phased arrays,particularly in terms of high power,high efficiency,and multi-band functionality.The research aims to tackle these challenges by targeting key circuit modules in mm-Wave phased-array transceivers.Design techniques for high power and high efficiency Doherty power amplifier(PA),dual-band reconfigurable PA,and dual-band reconfigurable low-noise amplifier(LNA)are proposed.Based on the research foundation of the aforementioned circuit modules,further research is conducted on silicon-based dual-band reconfigurable phased-array transceiver for multi-band and multi-standard 5G/6G mm-Wave applications.The research content of this dissertation mainly includes the following five parts:1.Research on silicon-based mm-Wave high-power Doherty PA.A high-power series-Doherty load modulation network is proposed to meet the requirements of high output power and high back-off efficiency for 5G/6G mm-Wave phased array transceivers.A combination of series-Doherty structure and parallel combining technique is introduced to achieve high output power(Pout),low-loss power combining,and a true Doherty load modulation simultaneously.Meanwhile,the transformation of the load modulation network is developed to integrate the quarter-wavelength transmission line in the transformer-based output matching network.Therefore,the reduction of insertion loss and chip area are achieved.Implemented in 55nm CMOS,the high-power Doherty PA achieves 26.8 dBm saturated output power(PSAT),and 19.2%power-added efficiency(PAE)at 6 dB power back-off(PBO).2.Research on silicon-based mm-Wave deep back-off three-way Doherty PA.To address the issue of high peak-to-average power ratio(PAPR)of 5G/6G mm-Wave complex modulated signals,a three-way parallel-series Doherty load modulation network is proposed,which achieves deep back-off efficiency enhancement,high Pout,and compact size,simultaneously.Through the research on the equivalent circuit transformation of the load modulation network,two quarter-wavelength transmission lines are integrated into the transformer-based output matching network,achieving a compact and low-loss design of the three-way parallel-series load modulation network.Meanwhile,a compact parallel-combining transformer(PCT)is utilized for efficient power combining of the auxiliary PA,which further improves the Pout.Implemented in55nm CMOS,the three-way Doherty PA achieves 25.5 dBm PSAT,20.4%PAE at 6dB PBO,and 14.2%PAE at 12 dB PBO,with a core area of only 0.54mm~2。3.Research on silicon-based mm-Wave dual-band three-mode PA.To address the integration trend of multiple frequency bands and standards in 5G/6G mm-Wave,a dual-band three-mode PA structure is proposed.This structure has three operating modes:1)a28 GHz narrowband mode,2)a 39 GHz narrowband mode,and 3)a dual-band mode operating at both 28 GHz and 39 GHz.A co-design method of transformer-based matching network and neutralized common-source(CS)amplifier is introduced to realize the amplification path with bandpass filtering response.In parallel,a multi-amplifier reconfigurable structure is utilized to switch the amplification paths without degrading the performance of the PA.Implemented in 55nm CMOS,the two narrowband modes of the PA cover the frequency ranges of 23-29 GHz and 34-43 GHz,respectively.The bandpass filtering response suppresses the out-of-band harmonics and spurs.Meanwhile,the dual-band operation mode covers both 23-29 GHz and 34-43 GHz frequency ranges,supporting the application scenarios where multiple frequency bands signals need to operate simultaneously.4.Research on silicon-based mm-Wave dual-band reconfigurable LNA.To address the integration trend of multiple frequency bands and standards in 5G/6G mm-Wave,a dual-band reconfigurable LNA structure is proposed.The multi-amplifier reconfigurable structure is implemented as a broadband low-noise input stage to obtain two amplification paths with different operating frequencies.The co-design method of transformer-based matching network and neutralized CS amplifier is also introduced to realize the amplification path with bandpass filtering response,which improves the anti-interference ability to out-of-band blockers.Implemented in 55nm CMOS,the two operating modes of the LNA cover the frequency range of 23-29 GHz and 33-42 GHz,respectively.And the bandpass filtering response could effectively filter out the out-of-band interferers.Meanwhile,the out-of-band input 1dB compression point(IP1dB)is higher than-4.0/-6.5dBm.5.Based on the research foundation of the circuit modules described above,further research is conducted on the development of a dual-band reconfigurable phased-array transceiver applied in 5G/6G mm-Wave multi-band and multi-standard applications.Various innovative techniques are integrated,including the co-design method of transformer-based matching network and neutralized CS amplifier,multi-amplifier reconfigurable structure,and broadband high-precision phase control to improve the performance of the dual-band reconfigurable phased array transceiver.Implemented in55nm CMOS,the two operating modes of the dual-band phased array transceiver cover24-30 GHz and 36-43 GHz,respectively.The dual-band phased array transceiver achieves6-bit phase control and a 12 dB gain control range.The root mean square phase errors for both modes are less than 0.72°and 1.24°,respectively.The dual-band phased array transceiver also exhibits a band-pass filtering response,which improves the anti-interference ability to out-of-band blockers. |
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