Performance And Application Research Of Tribotronic Transistors Based On Two-dimensional Materials

With the rapid development of information technology,there is a growing need for smaller,multifunctional sensor components and computers with higher computational power to meet the demands of data collection and processing.Currently,the size of silicon-based electronic components has reached the limits of Moore’s Law,making it difficult to meet current development requirements.Recently,research on two-dimensional material semiconductor devices has the potential to continue Moore’s Law and has attracted the attention of many researchers.At the same time,the triboelectric nanogenerator（TENG）has emerged as a new type of energy harvesting and sensing device.It not only converts mechanical energy into electrical energy but also converts mechanical displacement signals into electrical signals,the self-driven sensing function is realized.This article mainly focuses on the preparation and exploration of a new type of triboelectronics device that combines the TENG and two-dimensional material transistors.It demonstrates the applications of the device in areas such as logic,sensing,and artificial synapses.The main research contents are as follows:（1）By coupling TENG with MoTe₂ transistors,an ambipolar tribotronic transistor and a mechanically controlled logic device that can be modulated by external mechanical motion are constructed.First,a horizontally sliding triboelectric nanogenerator was fabricated using polytetrafluoroethylene（PTFE）film and aluminum foil.The electrical performance of the triboelectric nanogenerator was tested,and its voltage output range was adjusted to-40V～40V.The working mechanism of the horizontal sliding triboelectric nanogenerator was analyzed.Secondly,few-layer MoTe₂ two-dimensional material was obtained by mechanically exfoliating bulk MoTe₂ material using 3M tape.Ambipolar MoTe₂ transistors were built using electron beam exposure,thermal evaporation,and peeling techniques with the two-dimensional material as the channel material.Finally,an ambipolar MoTe₂ tribotronic transistor was obtained by coupling the horizontal sliding triboelectric nanogenerator with the ambipolar MoTe₂ transistor.The friction potential can adjust the carrier type and concentration of electrons and holes in the MoTe₂ channel,effectively driving the bipolar MoTe₂ transistor.The device achieved a low cutoff current of less than 1 p A·μm-1 and a high current on/off ratio dominated by holes/electrons（10²/10³）.A displacement regulated inverters was constructed based on the MoTe₂ transistor,which achieved a complete reversal of V_OUT from 1 V（output logic"1"）to 0 V（output logic"0"）as the displacement D changed from-10 mm to 10 mm under V_DD=1 V.The constructed bipolar friction transistor provides a method to modulate the carrier type and concentration in the channel through external mechanical displacement.（2）By coupling TENG with two-dimensional heterojunction transistors,a two-dimensional heterojunction tribotronic transistor controlled by friction potential is constructed,and the fabricated devices are used as photodetectors.First,a contact-separation friction nanogenerator was fabricated using PTFE film and aluminum foil,and the working mechanism of the contact-separation friction nanogenerator was analyzed.Secondly,MoTe₂/hBN and MoTe₂/CuInP₂S₆ two-dimensional heterojunction materials were prepared using3M tape and PDMS transfer methods.MoTe₂/hBN and MoTe₂/CuInP₂S₆transistors were constructed using micro-nano processing techniques with these two-dimensional heterojunction materials as the channel materials.Finally,two types of friction heterojunction transistors,MoTe₂/hBN and MoTe₂/CuInP₂S₆,were obtained by coupling the contact-separation friction nanogenerator with MoTe₂/hBN and MoTe₂/CuInP₂S₆ transistors,respectively.The friction potential can adjust the carrier type and concentration of electrons and holes in the MoTe₂/hBN channel and control the carrier type and concentration in the MoTe₂/CuInP₂S₆ channel.Both types of two-dimensional heterojunction materials were successfully used as tribotronic transistor-based photodetectors.（3）By combining TENG with MoTe₂/CuInP₂S₆ ferroelectric semiconductor transistors,a multi-modal plasticity artificial neural morphology device was successfully constructed to simulate typical synaptic characteristics under mechanical displacement pulse stimulation.Single-pulse enhancement/inhibition plasticity,paired-pulse facilitation/inhibition,and multi-pulse enhancement/inhibition effects of synapses were successfully simulated.The fabricated artificial synapse can significantly reduce energy consumption and effectively reflect the spatiotemporal information from the external environment,demonstrating the potential interaction between mechanical behavior and synaptic plasticity regulation.The aim is to build a high-efficiency,high-integration,and low-energy-consumption neural morphology computing system.