Multiple Researches Of Photoelectric Effect In Kinds Of Semiconductor Structures

Photoelectric effects are presenting a promising strategy for humans to achieve the modern society full of science and technology.Due to the prominent properties,kinds of photoelectric effects are applied in the areas of optoelectronics,chemical engineering,spaceflight and bioengineering.For the thriving development of photoelectric technology,the researches of emerging materials play a key role.Among multiple materials,the nano semiconductor materials present high application value in photoelectricity.The semiconductor is deemed to own the potential to meet the demands of future society.As the foundation of the photoelectronics,the semiconductor strongly correlates with the development of high-end technology in civilian,industrial and military fields.This work reports the promotion of photoelectric performance in semiconductors while combined with emerging materials and structures and the detailed research introduction is presented as follows:Firstly,by utilizing the photoelectrical properties of Mo S₂and Hf O₂,we present a a reliable approach to modulate the switching characteristic in the structure of Mo S₂/Hf O₂/p-Si.Memristors adopting emerging materials are identified as potential devices to accelerate the social progressy in future.To build the memristors capable of achieving reliable and advanced action,the property of resistance switching deserves a lot of attention.Here,specially,the switching characteristic is highly sensitive to light irradiation,which can be greatly enlarged by optical stimulation and regulated by irradiation position.This optical sensitivity is mainly because the growth orientation of Mo S₂ on the surface of Hf O₂ alters from vertical to horizontal within certain thickness.The horizontally standing layer helps the photocarrier transport,reducing the diffusion loss and enlarging the detection range.Meanwhile,the special layer can aggregate the carriers in a thin layer close to the interface,which takes full advantage of the vacancy migration.This section provides an approach to achieve the regulable switching device,which is hoped that the structure can make contribution to further researches of memory devices.Secondly,we study the photoelectric effect based on interface states in Si-base structures and discuss about the factors impacting significantly on performance.Different from the traditional Schottky junction or PN junction devices,these interface states can be explained as the surface defect of Si,which induces the the band bending at interface.This section proves that the interface states make great contribution to the generation of photocarriers and reduction of diffusion losses,accelerating the photoelectric performance.In experiments,it displays in detail how each physical parameter of the system contributes to the photoelectric properties,suggesting a simple but efficient device in the area of photodetection.Besides,we present a review article focusing on two certain types of photoelectric effect of lateral photovoltaic effect and photo-induced resistance effect,where a detailed discussion is given to exhibit the contributions brought by the nanoscale materials.Thirdly,we report a high-performance photodetector based on a carbon/silicon carbide(SiC)structure.Due to the excellent properties in mechanics,optics and electronics,SiC is a hot material in the scientific research field and widely exploited in microelectronic devices.In this section,we combine the nanoscale film of carbon with the SiC substrate finding that this detector has a wide photodetection zone and a splendid photoelectric performance,which can be attribute to the combination of applied electric voltage and local electromagnetic field enhancement at structure surface.Besides the merits of low cost and brief structure,the device achieves a higher photodetection gain,a faster photo-response and a wider detection range.We consider the work can promote the research and technology of photodetection based on SiC.