Surface chemistry of silicon and germanium molecular precursors for epitaxy on silicon

pitaxial growth of silicon and germanium is an important issue in integrated circuit fabrication technology. Knowledge of the surface chemistry of molecular precursors for epitaxial growth is important for control of semiconductor processing. Laser-induced thermal desorption (LITD) and temperature programmed desorption (TPD) techniques were used to study the adsorption and decomposition kinetics of molecular precursors on Si(111) 7 x 7 surfaces.;Dichlorosilane, ;Alkylsilane molecules are candidates for the atomic layer epitaxy of silicon. Alkylsilanes were found to adsorb dissociatively on silicon surfaces. LITD and TPD techniques monitored desorption of CH;Epitaxial growth of germanium on silicon is crucial for growth of...