| This dissertation explores the design, fabrication, and characterization of visible (620 to 690 nm) vertical cavity surface emitting lasers (VCSELs), consisting of an (Al{dollar}sb{lcub}rm y{rcub}{dollar}Ga{dollar}sb{lcub}rm 1-y{rcub})sb{lcub}rm x{rcub}{dollar}In{dollar}sb{lcub}rm 1-x{rcub}{dollar}P strained quantum well optical cavity active region, surrounded by AlAs/Al{dollar}sb{lcub}rm x{rcub}{dollar}Ga{dollar}sb{lcub}rm 1-x{rcub}{dollar}As and Al{dollar}sb{lcub}0.5{rcub}{dollar}In{dollar}sb{lcub}0.5{rcub}{dollar}P/(Al{dollar}sb{lcub}rm y{rcub}{dollar}Ga{dollar}sb{lcub}rm 1-y{rcub})sb{lcub}0.5{rcub}{dollar}In{dollar}sb{lcub}0.5{rcub}{dollar}P distributed Bragg reflectors (DBRs). The lattice-matched device structures are grown on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). The key design and fabrication issues are reviewed and contrasted with conventional Ga{dollar}sb{lcub}rm 1-y{rcub}{dollar}In{dollar}sb{lcub}rm y{rcub}{dollar}As/Al{dollar}sb{lcub}rm x{rcub}{dollar}Ga{dollar}sb{lcub}rm 1-x{rcub}{dollar}As near infrared (IR) VCSELs. Design trade-offs and quantum well gain characteristics are examined by studying optically pumped structures. Device fabrication techniques are developed, and the first electrically injected visible AlGaInP VCSELs are demonstrated. Prototype devices operate with pulsed current excitation at room temperature with a maximum output power of 3.38 mW at a lasing emission wavelength of 650 nm with threshold current densities of about 4.2 kA/cm{dollar}sp2{dollar} and threshold voltages of about 2.7 V. Due to cavity losses and unoptimized gain layer design, lasing is only achieved with significant gain contributions from the second (n = 2) quantized quantum well state. With several design improvements, pulsed room temperature (23{dollar}spcirc{dollar}C) lasing is achieved over the very broad range 629.6 to 691.4 nm, where the lasing emission above 650 nm is due primarily to gain contributions from the first (n = 1) quantized quantum well state. For conventional top-emitting ion implanted devices, efficient room temperature continuous wave operation is demonstrated over the range 656.6 to 684.9 nm, with threshold currents below 2 mA (with threshold current densities of about 2 kA/cm{dollar}sp2),{dollar} threshold voltages of about 2 to 3 V, and output powers exceeding 0.5 mW. |
