Indium phosphide-based high performance quantum well avalanche photodiodes and integrated photoreceivers |
Posted on:1995-01-25 | Degree:Ph.D | Type:Dissertation |
University:University of Michigan | Candidate:Gutierrez-Aitken, Augusto L | Full Text:PDF |
GTID:1478390014491511 | Subject:Electrical engineering |
Abstract/Summary: | |
arge bandwidth optical communication systems are becoming more important than ever for transferring information efficiently. The availability of high performance photodetectors and front-end photoreceivers that operate in the low-loss 1.55 ;High-speed and high gain-bandwidth product SAM(MQW)-APDs with a strained In;Integrated PIN-FET photoreceivers with transimpedance and transimpedance/voltage amplifiers based on regrown 0.1 ;Integrated PIN-HBT transimpedance photoreceivers using the base, collector and subcollector HBT layers as the p-i-n photodiode were fabricated and characterized. Discrete HBTs demonstrated 54 GHz and 51 GHz for... |
Keywords/Search Tags: | Integrated, Photoreceivers |
|
Related items |