| Experimental investigations have been performed to determine the mechanism of intrinsic gettering of iron and nickel in silicon wafers. The investigation has been performed on float-zone silicon wafers implanted with argon to generate a high concentration of self-interstitials (SIs), and on Czochralski silicon wafers implanted with oxygen to grow a high density of oxygen precipitates. The samples are intentionally contaminated with the metal impurity by depositing a 70-90 nm thick layer on the back side of the wafer and subsequently annealing the wafers between 800 and 1025... |
