| Quantitative analysis using secondary ion mass spectrometry (SIMS) has historically been difficult due to the extreme variability of sputtered ion yields and their sensitivity to the chemistry of the surface from which they are ejected ("matrix effects"). Attempts at quantitative analysis have been made through the development of theoretical models or by using standards to determine sensitivity factors and to create working curves. Alternate methods are presented that eliminate the need for such elaborate quantitative analytical schemes.;Trace elements in geological samples as well as bulk impurities and interfacial contaminants in thin films were quantified by reference to ion implanted standards generated in situ in the ion microanalyzer. The primary column of a secondary ion mass spectrometer (Cameca IMS 3f) was used to implant potassium into NBS standard glasses and plagioclase to determine the total potassium content, which is difficult at best by other analytical techniques. This technique was also used to quantify hydrogen, oxygen, fluorine and chlorine in TiSi;In order to extend the in situ ion implantation technique to the analysis of trace metals, a hollow cathode ion source was developed which has been adapted to the ion probe. This source is capable of generating primary ion beams from several metals with currents large enough (;Major element levels (... |
