Metrology of Epitaxial Thin Films and Periodic Nanostructures using High Resolution X-Ray Diffraction Techniques

The continued scaling of device size to achieve higher performance and/or lower power operation at lower cost is driving research and development into new, 3D transistor structures such as the FinFET. This research and development effort is highlighting the need for new, advanced measurement capability that is highly accurate, reliable, rapid, and nondestructive. Periodic arrays of fin structures enable process monitoring at each level of fabrication and the maintenance of overall device yield. High resolution x-ray diffraction (HR XRD) has been shown to provide unique capability of characterizing blanket thin films and structural parameters of periodic arrays of fins fabricated in single crystal materials. Application of HR XRD techniques to characterize fin structures with critical dimensions of 1x-2x nm has been very limited. The main objective of my research is to develop and apply HR XRD techniques that analyze critical parameters such as the lithographic pitch, pitch walking, sidewall slope, and fin top width in arrays of advanced fin structures. This research also investigates the stress state of initially pseudomorphic epilayers at the top of the fin, and identification of defects. The results for non-patterned epitaxial fully strained SiGe and GeSn alloys are presented and the methods of detecting periodicity, strain state and shape of arrays of lithographically patterned silicon and silicon-germanium fins are demonstrated using synchrotron source and laboratory x-ray diffractometers.