| This research is focused upon establishing the foundation of high performance LNA design for various applications and, based on that foundation, presents the simulation, design, and development of monolithic microwave integrated circuit (MMIC) LNAs for wireless data applications. First, an accurate microwave small-signal and noise model of InP high electron mobility transistors (HEMTs) has been developed to design cryogenic ultra low noise amplifiers for ground-based receivers in the DSN. This is the first reported cryogenic noise characterization and model development for hip HEMTs. Second, an accurate small-signal and noise model for GaAs metal-semiconductor FET (MESFET) has been developed based upon measurement and our unique extraction method. Using our models, a low power and high IIP3 MMIC LNA for C-band wireless data communications has been developed. This LNA showed the highest IIP3 compared to other C-band LNAs using other device technologies. The first 5.8 GHz OFDM MMIC LNA has been redesigned and implemented. Finally, an accurate small-signal and noise model for complementary metal-oxide semiconductor (CMOS) has been developed using our own extraction method. This model is used to design a MMIC LNA for a 2.4 GHz Bluetooth system. |
