Optical properties of II-VI semiconductor materials and superlattice structures |
Posted on:1997-04-21 | Degree:Ph.D | Type:Dissertation |
University:Georgia Institute of Technology | Candidate:Tran, Tuyen Kim | Full Text:PDF |
GTID:1468390014480857 | Subject:Physics |
Abstract/Summary: | |
The objective of this research was to investigate the optical properties of II-VI semiconductor materials for device applications. This research addressed three main issues: (1) heavily doped n-type CdTe:I and Hg;The CdTe:I layers exhibited a photoluminescence (PL) intensity greater by a factor of 10;The first 300K PL excitation spectra reported showed separated and pronounced resonances associated with the ground (X;Systematic studies of the excitation-intensity and magnetic-field dependence of the PL revealed direct evidence of excitonic contribution to the observed luminescence in Hg;Luminescence studies from ZnS layers identified emission from X... |
Keywords/Search Tags: | II-VI semiconductor materials, Optical properties |
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