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Design and grayscale fabrication of beamfanners in a silicon substrate

Posted on:2002-06-01Degree:Ph.DType:Dissertation
University:The University of Alabama in HuntsvilleCandidate:Ellis, Arthur CecilFull Text:PDF
GTID:1468390011491905Subject:Physics
Abstract/Summary:
This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1–2 and 1–4 beamfanner arrays for 5-micron illumination. The 1–2 beamfanner arrays serve as a test-of-concept and basic developmental step toward the construction of the 1–4 beamfanners.; The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance.; Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2–3micron feature size 1–4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1–4 and 1–2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama.; A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained.; One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5-micron IR illumination of the 1–4 and 1–2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.
Keywords/Search Tags:Beamfanner, Fabrication, Grayscale, Silicon, Process
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