Development of radiation detectors based on hydrogenated amorphous silicon and its alloys

Hydrogenated amorphous silicon and related materials have been applied to radiation detectors, utilizing their good radiation resistance and the feasibility of making deposits over a large area at low cost. Effects of deposition parameters on various material properties of a-Si:H have been studied to produce a material satisfying the requirements for specific detection application.;Thick(;Thin (0.1-0.2 ;Hydrogen dilution of silane has been explored to improve electrical transport properties of a-Si:H material for high speed photo-detectors and TFT applications. Various electrical properties of the hydrogen-diluted a-Si:H showed factors of 3 ;Material properties of the a-Si:H based materials can be easily adapted to the characteristics required for individual applications by modifying fabrication conditions and procedures. This asset, in addition to the advantages of large area capability and radiation hardness, makes a-Si:H an attractive candidate for radiation detection applications.