| ulsed unskimmed supersonic molecular beams of trimethylaluminum (TMA) and ammonia are used to grow thin films of AlN.;Supersonic molecular beam gas sources offer several advantages that are favorable for material growth. The translational kinetic energy of each precursor can be varied by "seeding" the source gases. The expanded beams have high energy resolution. The intensity of a supersonic molecular beam source can be several orders of magnitude higher than typical effusive sources. The translation kinetic energy of the Al prercursor (TMA) was 130 meV in all cases. The translational kinetic energy of the N precursor (ammonia) was varied: 160, 220, 500 meV. Post depositional analysis included X-ray diffraction, scanning electron microscopy (SEM), Auger electron spectroscopy (AES), reflectance spectroscopy, x-ray fluorescence, Fourier transform infrared spectroscopy (FTIR).;Preliminary experiments were done to determine the optimal experimental conditions necessary for individual constituent deposition. Then a series of experiments was done to determine the duty cycle 6 necessary for AlN film growth. The effect varying each pulse rate, substrate temperature and deposition time on film composition and growth rate was determined. The films were grown on Si ;The resulting films are mostly oriented with the non-polar AlN (10... |
