Derivative photoelectron holography studies of metal-terminated semiconductor surfaces

The technique of Derivative Photoelectron Holography is used to form three dimensional images of the local neighborhood of metal atoms terminating semiconductor surfaces. The arsenic-terminated germanium (111) surface is studied as a test case and the results are shown to be in good agreement with an ideal unreconstructed diamond structure surface. The arsenic terminated silicon (100) surface is studied as an example of a system with a complex holographic image. Results indicate that the angular resolution is actually better than expected from the standard simple approximations usually used to describe photoelectron holography, and a more detailed theory is discussed which explains this excellent resolution. Finally the technique is applied to the (4 x 3) reconstruction of the indium-terminated silicon (100) surface. The structure of this system has been greatly debated in the literature, and the holographic technique is used here to resolve this debate.