| In order to fill the need for more densely packed photonic integrated circuits (PICs) the higher optical confinement provided by high-index-contrast (HIC) ridge waveguide (RWG) structures is required. In order to realize the high index contrast (An) between the semiconductor waveguide core and the dielectric cladding, an oxygenenhanced non-selective wet thermal oxidation (OENSO) process developed at the University of Notre Dame has been applied to the fabrication of GaAs and InP based HIC RWGs. In this work, the unique characteristics of HIC RWGs as well as the interface between the semiconductor and the native oxide have been examined. Utilizing this process, passive single mode HIC RWG devices have been fabricated which exhibit record low propagation losses. Active diode laser devices are fabricated with improved performance over previous results. For the first time these devices have been modified for junction side down bonding to heatsinks and characterized under continuous wave (CW) excitation while mounted to a temperature controlled stage. Finally, the use of the OENSO process has been extended for use in the oxidation of InGaAs lattice matched to InP. As proof of the efficacy of this process for use in this new material system, a novel native-oxide confined quantum cascade laser operating at e=5.4 im has been demonstrated. |
