Integrated micro thermoelectric cooler: Theory, fabrication and characterization

The flows of heat and electricity in a column-type micro thermoelectric (TE) cooler that uses telluride compounds for the n- and p-type elements, are analyzed by modeling the various interfacial resistances. Electron (barrier tunneling) and phonon (diffuse mismatch) boundary resistances at the TE/metal interface, and thermal non-equilibrium between electrons and phonons adjacent to this interface (cooling length), increase the thermal conduction resistance and decrease the Seebeck coefficient of the TE elements. These in turn reduce the device cooling performance, which is also affected by the thermal and electrical contact resistances at the TE/metal and the metal/electrical-insulator interfaces.; From the device optimization, it is predicted (for an available voltage of 3 V) that a micro TE cooler with 50 TE pairs (Bi2Te3 and Sb2Te3 high performance TE films), column thickness of 4 mum (limited by the current fabrication process), and column cross-section area of 7 mum x 7 mum, should produce a temperature drop of 10 K with a cooling load of 10 mW. This device will operate with a current of 11 mA and will require a power of 34 mW. The coefficient of performance is 0.3.; Co-evaporated Bi-Te and Sb-Te films were fabricated at various deposition conditions (evaporation rate of individual species and substrate temperature), and their TE properties (Seebeck coefficient, electrical resistivity, and carrier concentration) were measured, in search of optimal TE performance. The deposition rates were controlled such that the tellurium atomic composition changed from 48 to 74%, and the substrate temperature ranged from 130 to 300°C. The chemical composition and crystal structure of the films were recorded (using a microprobe and a X-ray diffractomer, respectively), analyzed, and compared with standard Bi2Te3 and Sb2Te 3 single crystal samples. High performance TE films had a tellurium atomic concentration around 60% and were deposited at a substrate temperature between 260 and 270°C.; Due to degradation of the photoresist used for patterning the TE films, in the first-generation device, they were deposited with a maximum substrate temperature of 130°C. The TE columns were connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. A device with 60 TE pairs and column width of 40 mum (finer device structures had limited yield) was tested using infrared thermometry. The average cooling achieved was about 1 K, which was close to the predicted value.; A future-generation device is proposed, where high performance TE films can be patterned with optimized geometries (high density micro TE coolers), allowing these devices to fulfill the requirements for a wireless environmental monitor application.