| One of the interesting and unsettled transport phenomena is the, so called, "anomalous Hall Effect". It generally refers to the phenomenon of a non-linear field dependence of the Hall resistivity rhoxy. An emerging idea relates to the "gauge field O" experienced by electrons. It gives rise to Berry phase accumulation. In ferromagnets, a non-vanishing O( k&ar; ) is related to the spin-orbit coupling and the time-reversal asymmetry. We show that, in the ferromagnetic spinel CuCr2Se 4-xBrx, the anomalous Hall conductivity sigma xy (normalized to per carrier, at 5K) remains unchanged with a 1000-fold increase in resistivity. From the anomalous Nernst effect, we uncover a simple relation for the off-diagonal Peltier conductivity tensor alphaxy, which is a measure of a transverse electrical current density generated per unit of applied temperature gradient. They both strongly support the anomalous-velocity theory based on the intrinsic spin-orbit coupling of the electrons.; An alternative way to procure O is from the spin-chirality effect. In the Mn-doped chalcopyrite semiconductor CuGaTe2, with a few percent doping, the orbitals of the Mn ions overlap to form an impurity band. Therefore, the electrons will accumulate Berry phase while hopping around the Mn ions that have a non-collinear magnetic ground state. We observed the enhanced and non-monotonic field dependence of rhoxy, which may be understood from the spin-chirality effect. Finally, we studied the Hall effect and thermopower in the ruthenate Bi3Ru3O 11. From the Hall effect, we observed field-tuning of electron and hole populations. We also found a large field dependence of the thermopower at low temperature. The origin of the colossal field-dependence in the thermopower is still an open question, but it is linked to the unusual electronic properties in the Bi3Ru3O11. |
