| InAs/GaSb superlattice materials have many aspects which make them an ideal choice for use in the active region of infrared optoelectronic devices. These materials are superior to similar systems due to their wide range of compositionally controlled band gaps, strong interband absorption, and reduced Auger recombination. However, due to the precarious strain relationships introduced by a non-common anion interface between the two binary compounds, the growth of InAs/GaSb superlattices often self-organizes into a face-centered array of InAs/GaSb nanowires concurrent with lateral composition modulation. These self-organized structures have the potential to enhance optical and electrical qualities of this material system. In this work, both planar and self-organized InAs/GaSb superlattices are examined. X-ray diffraction studies examine the relationship between strain and self-organization, while infrared spectroscopy was used to determined optical absorption and radiative recombination efficiency. |
