New Types Of Information Devices Based On Memtranstor

With the development of information technology,computers are required to have higher information storage and processing capabilities.With the semiconductor technology approaching the physical limit,Moore's law has gradually become invalid.In this case,people urgently need to develop new types of electronic devices with information storage and computing capabilities.Developing non-volatile memory with higher storage density and lower energy consumption has become an important research topic.In addition,the von Neumann architecture in which the processor and the memory are separated,is widely used in modern computers,which has become a bottleneck restricting the performance of computers(called von Neumann bottleneck).Therefore,in order to break through the bottleneck of the development of computers,a Non von Neumann architecture in which logic and memory combine in a single device is proposed.The development of non-volatile devices with both memory and logic functions becomes a key issue.The human brain has the characteristics of low power and high efficiency.Inspired by this,it is of great significance to develop artificial synaptic devices and neural networks.In this paper,we explore the application of memtranstor in nonvolatile memory,Boolean logic devices and synaptic-like devices based on the magnetoelectric coupling effects.The main achievements are listed as follows:1.Non-volatile memory based on memtranstor is studied.The PMN-PT/TerfenolD memtranstor was fabricated,and the influence of the external magnetic field and polarization direction on the memtranstor's magnetoelectric coefficient was studied.It is found that when the external magnetic field remains unchanged,the magnetoelectric coefficients of the memtranstor can change its sign by reversing the direction of the electric polarization,and the magnetoelectric coefficients can be maintained for a long time.When the positive and negative voltage pulses are applied repeatedly to the memtranstor,the magnetoelectric coefficients of the memtranstor changes repeatedly.In addition,when we apply a suitable voltage pulse,the polarization of the memtranstor can be reversed.At this time,the magnetoelectric coefficient of the memtranstor is in the intermediate state,and the state can be maintained for a long time.Finally,repeatable switching among 4 and 8 states are realized in the memtranstor by choosing the appropriate electric field.Thus,non-volatile memory and nonvolatile multilevel memory based on memtranstor are realized.2.Boolean logic device based on memtranstor is studied.The memtranstor Ni/PMN-PT/Ni was fabricated,and two general logic gates,NAND and NOR,were realized by choosing appropriate logic operation control method.In addition,the memtranstor Fe Ga/PMN-PT/Fe Ga is fabricated.By controlling the initial state of the memtranstor,the electric fields of two terminals and the phase angle,all 16 Boolean logic operations are realized in a single memtranstor.3.Artificial synaptic device based on memtranstor is studied.In the memtranstor Ni/PMN-PT/Ni,the long-term potentiation and depression of synaptic plasticity are realized by applying continuous voltage pulses,and the spikingtime-dependent plasticity(STDP)is realized in the memtranstor by using a specially designed voltage pulse sequence.Based on the above results,we construct a memtranstor array to simulate the learning process of neural networks.