Research On The Application Of Ultra-Steep Tribo-Iontronic Transistor And Its Artificial Synapse

Since Gordon Moore proposed Moore’s Law in 1965,Moore’s Law has guided the electronic information industry(IT)for decades and the rapid development of electronic equipment in the direction of miniaturization.Now that the physical limit of transistor has broken through the 5 nm process node,the limit of Moore’s Law is coming soon.In order to break through the limits of Moore’s Law,the IT industry has begun to develop in the direction of Super Moore’s Law.New materials and process technologies continue to emerge,and multi-functional equipment,active sensors,self-powered systems and neuromorphic devices have been rapidly developed.Since the advent of triboelectric nanogenerator,it has unique advantages in energy harvesting and sensing field.By the combination of triboelectric potential and semiconductor devices,a new discipline of tribotronics has been formed.In order to develop self-powered electronic devices for high-performance field-effect transistors,based on the tribotronics,this dissertation focuses on the coupling of TENG and ion gel electric double-layer transistor,to achieve efficient modulation of the triboelectric potential.High capacitance characteristics,steep sub-threshold swing characteristics,and neuromorphic transistor application research in logic and artificial synapses have been studied comprehensively.The main work of this dissertation includes the following three aspects:Firstly,an indium oxide tribotronic transistor based on the ion gel electric double layer structure is constructed.The ion gel was used as the gate dielectric material.The polarization of the electric field induces the ion gel to produce an electric double layer structure,and the effective modulation of the channel carriers of the device under triboelectric potential is realized through capacitive coupling.In addition,the performance of the ion gel electric double layer capacitance was tested and studied,and the formation principle of the triboelectric double layer was analyzed.Through the characterization and analysis of the impedance of the ion gel and the Nyquist curve,it was reflected that the high-efficiency carrier modulation capability of the ion gel as the gate dielectric of the field effect transistor.Secondly,the electrical properties and the working principle of tribo-iontronic transistors are studied.Through the test of transfer characteristics and displacement output characteristics under dynamic triboelectric potential,the electrical characteristics of devices regulated by external electric field and triboelectric potential are compared.It is proved that the triboelectric potential is comparable to the performance of the traditional electric gated transistor.The steep characteristics and influencing factors of the tribo-iontronic transistor are analyzed.The results show that the tribo-iontronic transistor has excellent application potential in high sensitivity distance sensing.Finally,the concept of mechanical plasticity steep neuromorphic transistors is proposed.The application of neuromorphic transistors in logic and artificial synapses is mainly studied.The steep neuromorphic transistor can realize neuromorphic logic applications under tactile stimulation.The steep neuromorphic transistor simultaneously simulates the enhancement/inhibition plasticity of biological synapses and the paired-pulse facilitation,short-term plasticity behavior,and long-term plasticity behavior.A high-response and high-recognition rate image recognition simulation proved its application advantages in the fields of logic conversion and neuromorphic computing.