Research On Semiconductor Materials Modification Using Micronano Fabrication And Manufacture Of Optoelectronic Devices

From the 20 th century,micro-nano fabrication technique has boosted a comprehensive and rapid development of semiconductor industry.Due to the limitation of equipment and fabrication methods,many scientific theory predicts were difficult to be demonstrated in experiments and applications.The update of micro-nano fabrication and complement of basic theories,provides a good platform for the route from scientific theory predicts to practical applications.The maturity of micro-nano fabrication introduces new applications of materials in optics and electronics,such as laser cavities,optics metamaterials,metasurfaces,photodetectors,bio-detectors,et al.Therefore,the study and exploration on new materials,devices and functions based on micro-nano fabrication is of great scientific significance.This essay mainly focuses on research into the properties and devices of semiconductor via micro-nano fabrication techniques.The innovative points are shown as follows: The silicon based optical-magnetic devices are prepared by using lithography micro-fabrication technology.A facile electron beam evaporation is used to obtain metal micronano structures,which enhanced graphene Raman spectra for application in detection of biological cells.Based on the interaction between electron and matters in electron beam micronano fabrication technology,micro-photoelectric devices are fabricated and ion transportation is studied in halide perovskite.Specific research contents are as follows:Based on micro-nano fabrication in large area,traditional semiconductor material in application of new micronano optical devices has been investigated.By tuning structural parameters,the optical properties of silicon film are modulated intensively and realized a magnetic resonance under a certain wavelength.Through theoretic simulation,the parameters of periodic micro-structure in new silicon device could be tuned to realize total reflection induced by magnetic resonance at any intensive wavelength.Additionally,new optical silicon device in centimeter scale is obtained via “photolithography-etching” technique with width of 1.95 ?m,thickness of 2 ?m and period of 6 ?m.The experimental spectra in two polarization corresponds to simulation.Comparing to the strong magnetic resonance at 8.1 ?m in simulation,there are two different resonances in experiment,7.9 ?m at TE and 8.1 ?m at TM,with errors of-2.5 % and 0 %.The application of micro-nano fabrication in new silicon optical devices in,opens up an advanced thought for traditional semiconductor materials.A low-cost graphene surface Raman enhancement?G-SERS?device based on sandwiched silver/reduced graphene oxide/gold?Ag@r GO@Au?using electron beam evaporation has been fabricated.The device realizes an enhancement factor of 70 in electromagnetic mechanism?EM?.The simulation for the coupling of localized surface electric fields generated from Ag nanoparticles and Au nanostructures,explains enhancement from electromagnetic of localized surface palsmonics in metallic antennas.Combining enhancement of chemical mechanism,the interaction between functional group of tumor cells and graphene is demonstrated due to the change of graphene characteristic peaks.Moreover,the characteristics of cancer cells are analyzed via enhanced spectra,to realize a rapid detection and identification for label-free tumor cells.Therefore,a facile and rapid micro-nano fabrication technique realizes G-SERS and provides a research basis to rapid detection and identification for label-free tumor cells.Surface modification and new luminescence devices of organic/inorganic perovskite?CH₃NH₃PbBr₃?based on interaction between electron and matters by electron beam lithography have been studied.The damping of photoluminescence?PL?in crystal,increase of Pb/Br ratio and formation of metallic Pb nanoparticles on the crystal surface are demonstrated in experiments after irradiation.Utilizing the electron beam lithography,one dimensional micro laser array is fabricated to realize transformation from WGM mode to F-P mode for perovskite laser.In addition,two-dimensional PL structures and micro-patterns are fabricated via electron beam lithography,which provides a technical choice to design and preparation of high resolution LED.Based on the interaction of electron and perovskite,the electron beam lithography has good potential for the application in high-resolution display and luminescence devices.Using electron beam lithography to control the properties of material in high precision,ion transportation mechanism and application in photodetector of organic/inorganic perovskite have been investigated.According to oxidation reduction process under the interaction between electron beam and matters,the distance of ion transportation is around 5.6 ?m.The optimal direction,lattice direction of <110>,is demonstrated in accordance with reported result in experiment for the first time.Due to the formation of metallic Pb at the bottom of crystal after the migration of Br ions and lower work function than conduction band of perovskite,it could be an electron transportation layer to optimize the photodetector.It is indicated that the photo-current is improved obviously with 117 % under bias of 1 V,and the response rate is promoted from 79.2 ms to 8.3 ms.