Theoretical Simulation And Fabrication Of 1.3?m Quantum Dot Band Edge Mode Photonic Crystal Surface-emitting Lasers

1.3?m band Laser has the characteristics of low loss and small dispersion in fiber,so the 1.3?m VCSEL(Vertical Cavity Surface Emitting Laser)as a kind of light source with fiber coupled with high efficiency,high modulation rate and low power consumption has irreplaceable advantages in the system which the optical interconnection between the big data centers and the center backbone and other medium-range systems requiring high transmission capacity.However,at present,the1.3?m quantum dot band edge mode photonic crystal surface-emitting laser is difficult to grow DBR and work at high temperature and the electrically pumped laser with photonic crystal structure to achieve surface emission has the disadvantage of low output power,although it does not need to grow DBR.In this paper by introducing special band of photonic crystal structure into the quantum dot surface emitting laser and add the design of the mixing chamber,fabricate the band edge mode of PCSEL(Photonic Crystal Surface Emitting Laser),in order to achieve high temperature continuous emitting,lower threshold,the purpose of improving edge mode rejection ratio,and increase the output power to meet its conditions in practical application.The main research contents and results of this paper are as follows:1.In this paper,the characteristics of photonic crystals,the resonance of photonic crystal surface emitting lasers and the principle of vertical emission are discussed.2.The calculation method of two-dimensional photonic crystal band structure and flat band are introduced and analyzed in detail.The experimental method for measuring the energy band structure of two-dimensional photonic crystals is also discussed.3.Finite element difference method(FDTD)was used to simulate the band edge mode photonic crystal.The influence of photonic crystal parameters on its energy band structure was investigated and its energy band structure diagram was analyzed.The photonic crystal with flat band singularity energy band structure at 1.3 microns was obtained by adjusting parameters such as photonic crystal aperture and depth.4.The key problems in the fabrication of planar photonic crystals are systematically studied.Analyzes the process of exposure measurement and the influence of beam speed of graphics,inductively coupled plasma(ICP)etching technology,deep etching photonic crystal graphic mask selection and preparation technology,and proposed a new applicable photons crystal graphic deep etching way of compound preparation of mask,to simplify the process conditions to improve accuracy of photonic crystals with graphics.5.Finite element difference method(FDTD)was used to simulate the band edge mode photonic crystal.The influence of photonic crystal parameters on its energy band structure was investigated and its energy band structure diagram was analyzed.The photonic crystal with flat band singularity energy band structure at 1.3 microns was obtained by adjusting parameters such as photonic crystal aperture and depth.6.The coupling cavity structure is applied to a 1.3?m quantum-dot surface-emitting laser.By combining the FP cavity with the photonic crystal cavity to limit the light leakage of the photonic crystal cavity,and the transverse resonance of the photonic crystal laser is enhanced to further improve the light output power.The surface emitting laser with an output power of 13mW and the threshold current density of 48.9A/cm~2 at room temperature and FWHM is 0.03nm,and it can still work at 70°C.The photonic crystal with band gap structure is used as the limiting cavity to further limit the leakage and improve the output power.