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Preparation And Properties Of NOx Phosphors For Rare Earth Doped LEDs

Posted on:2018-12-20Degree:DoctorType:Dissertation
Country:ChinaCandidate:X C LiFull Text:PDF
GTID:1318330536488501Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
White Light-emitting diodes?LEDs?,as a new type of solid-state light source,show an outstanding potential in illumination and display applications owing to their high luminous efficiency,low energy consumption,environment friendly,long life time.As one of the most important part of white LEDs,Phosphors directly decides the quality of White-LEDs such as color rendering,color temperature,life time and luminescent efficiency.Oxynitride phosphor,a thermally and chemically stable compound,led to intensive research into this new class of materials during the past decade.They have strong absorption in the near-UV to blue light region,well matching the near-UV LED chips and blue LED chips,thus making them excellent candidates for White-LEDs.This thesis focused on the preparation and luminescence properties of SrSi2O2N2:Eu2+ phosphors,We systematically researched the preparation process of SrSi2O2N2:Eu2+,luminous characteristics of host lattice cation ions co-doped SrSi2O2N2:Eu2+ and multiple activator ions co-doped SrSi2O2N2,thermal stability of luminescence of SrSi2O2N2:Eu2+.The main research work and the results are as follows:1.SrSi2O2N2:Eu2+ phosphors were respectively prepared by a high temperature solid-state reaction route from one step method with Si-Si3N4 system as starting materials and a two step method with Sr2SiO4 as a precursor.The formation of an impurity phase in the synthesis of SrSi2O2N2:Eu2+ was caused by the extra oxygen in starting material.Single-phase SrSi2O2N2:Eu2+ phosphors were synthesized successfully using the Si-Si3N4 as silicon source,avoiding the formation of an unknown phase,which usually exists from SiO2-Si3N4 system.The impurity phase appeared by the precursor method,which result from the high oxygen content of Sr2SiO4 precursor.2.It was found that the SrSi2O2N2 had an oxygen-rich phase and nitrogen-rich phase which are reflected with the diffraction intensity of?020?plane?2?=25.2°?and?220?plane?2?=31.6°?,respectively.The comparison of different composition of starting materials indicates that the different Si content in starting materials plays a part in phase and luminescence of SrSi2O2N2:Eu2+.With the increasing of Si content in starting material,the relative diffraction intensity ratio of?020?plane/?220?plane is increasing,following with the increasing of emission intensity.3.Sintering temperature and flux are important for the preparation of SrSi2O2N2:Eu2+.The samples can be prepared at 1350?,properly increasing the soaking temperature can improve the luminescence performance of the phosphors.Flux also has an important effect on the preparation of SrSi2O2N2:Eu2+.The addition of flux is beneficial to the formation of samples at 1350?,but caused the decrease of luminescence performance at 1425 ?.Experiments show that BaF2 is a better flux compared to NH4 Cl and H3BO3.there exits the optimum soaking temperature for various fluxes,1350?for H3BO3,1400? for BaF2 and NH4 Cl.4.The effect of different Eu valence(Eu2+/Eu3+)and partial substitution of Sr2+ by Ba2+ in Sr2SiO4 precursor on the luminescence properties of SrSi2O2N2:Eu2+ was studied.There exist charge defects originated from the replacement of Sr2+ by Eu3+ in Sr2SiO4:Eu3+ and anion vacancies which likely occur in Sr1.95Ba0.05SiO4:Eu2+ due to partial substitutions of Sr2+ by Ba2+.The defect in precursor plays a role on the PL properties.The emission intensity of SrSi2O2N2:Eu2+ can be obviously enhanced based the substitution of Sr2+ by Eu3+(Sr2SiO4:Eu3+)or Sr2+ by Ba2+(Sr1.95Ba0.05SiO4:Eu2+)while degraded in Sr1.95Ba0.05SiO4:Eu3+ precursor at 0.5-1%mol Eu2+ concentration.When the Eu2+ concentration exceeds 3mol%,the concentration quenching occurs,which plays main part in luminescence property.5.Host lattice cation ions co-doping has an important effect on color point tuning and performance improvement of SrSi2O2N2:Eu2+.The emission color of SrSi2O2N2:Eu2+ can be tuned by substitution of the host lattice cation Sr2+ by Ca2+.The luminescence measurements show that for the solid solutions Sr1-xCaxSi2O2N2:Eu2+ the emission band continuously shifts from 530 nm to 540 nm upon increasing the Ca content.Luminescence performance can be significantly improved by co-doping Re3+?Re=Y,La,Gd?in Sr1-xCaxSi2O2N2:Eu2+ phosphors.The effect of Y3+ doping on the luminescence properties of the samples was studied.The results revealed that 1%Y3+ ion doping can significantly improve the photoluminescence properties of MSi2O2N2:Eu2+?M=Ca,Sr?because the point defect result from the substitution of Y3+ ions for M2+ could inhibit the oxidization of Eu2+ to Eu3+.Besides,the Y3+ ions has smaller radius which could relax the expansion caused by the larger Eu2+ in CaSi2O2N2:Eu2+.The structure of Sr1-xCaxSi2O2N2:Eu2+/Y3+ can solve more Eu2+ ions at an equal distortion degree.With the increasing of x values in Sr1-xCaxSi2O2N2:Eu2+/Y3+,the luminescence intension ratio of Sr1-xCaxSi2O2N2:Eu2+/Y3+ to Sr1-xCaxSi2O2N2:Eu2+ raises?1.21.8?.Concentration quenching occurred in Sr0.99-xSi2O2N2: Eu2+0.01/xY3+ and Sr0.95-xSi2O2N2: Eu2+0.05/xY3+ as Y3+ content exceed 1%,co-doping Y3+ has better effect for Sr0.95Si2O2N2: Eu2+0.05 than Sr0.99Si2O2N2: Eu2+0.01.Luminescence performance can be significantly improved by co-doping Re3+?Re=Y,La,Gd?in SrSi2O2N2:Eu2+.6.Ce3+ sensitizer proved to be a good candidate for multiple activator ions doped SrSi2O2N2.The effective energy transfer from Ce3+ to Eu2+ in SrSi2O2N2:Ce3+/Eu2+ and from Ce3+ to Tb3+ in SrSi2O2N2:Ce3+/Tb3+ were observed.The efficiency of energy transfer between Ce3+ and Eu2+ was calculated and the energy transfer mechanism among them is due to dipole-dipole interactions.The luminescence intensity was greatly enhanced by doping Li+/Na+/K+ ions with charge compensation,and Li+ ions enhanced the luminescence intensities more obviously than Na+ and K+.7.Thermal stability of luminescence of SrSi2O2N2:Eu2+ was studied.The samples demonstrate a high thermal quenching temperature above 200 ?.The luminescence intensity of Sr0.95CaxSi2O2N2:Eu2+0.05 decreased faster compared to Sr0.99CaxSi2O2N2:Eu2+0.01 at 300°C.Furthermore,the quenching effect of SrBa0.05Si1.95O2N2:Eu2+ was slightly risen than SrSi2O2N2:Eu2+.The reason is that the substitution of small Sr2+ ions by larger Ba2+ ions in Sr0.95Ba0.05Si2O2N2:Eu2+ gived rise to a lattice expansion,and it results in increased Eu-?O/N?bond lengths,in which the thermal quenching properties can be improved.The samples were holding time for 10 h at 150-300? and the luminescent properties were tested once every one hour.The luminescent intensity of the samples increase with increasing holding time at 300 ?,while decreased slightly with increasing holding time below 300 ??150250??.
Keywords/Search Tags:Phosphor, SrSi2O2N2:Eu2+, Rare earth, Luminescence, Doping
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