Research On Multiscale Wavelet Meshfree Modeling Of RF Micro Devices

It is a great challenge to build RF Micro Device’s(RF MD) model because they are manufactured by micro-process, SI process etc. and be subject to multiple coupled physical phenomena at process level, such as initial stress, temperature, thermoelastic and electromagnetic effects. In order to accurately predict the characteristics of RF MD under the coupled effect, researchers study mechanism in the physical fields based on a variety of methods and have established more comprehensive multi-physics coupled finite element models which involve a large number of degrees of freedom(DF).The multi-physics coupled solution model, algorithm theory and the solution process on two typical RF MD-capacitive switch&torsional mirror in this paper. Propose the new numerical scheme and algorithm design method with less DF based on meshless.The mechanical and electrical properties of RF MD are studied in the numerical simulation that used to guide the design with comparison the theoretical model. Meanwhile RF MD simulation methods are supplement and improved.Coupled model of RF MD under the effect of multi-physics are studied and the main research content and innovations are as follows:1, Propose solving model of electrostatic droved capacitive switch based on Wavelet-EFG; Model equations are discreted with the non-adaptive grid instead of net grid adaptive. So do interpolation operations; One method is proposed to impose boundary conditions in one-dimensional structural analysis. Experiments confirmed that equations are discreted directly and discrete equations are achieved simply.2Considering the edge field, propose solving model of torsional mirror based on Wavelet-RKPM; Interpolate, solve equations at Mechanical field-electric field coupling step; More precise local solution is achieved through multi-scale RKPM adaptive algorithm. Experiments confirmed that the method is simple and easy.3, Coupled multi-scale analysis based on wavelet functions in the micro-structure level. The scales of analysis can be changed to achieve partial analysis to obtain more information of Pull-in and turn angle in capacitive switch&torsional mirror models.