| Sapphire is a wide band gap optical material with its broad transmission spectrum from ultraviolet to visible and near-infrared (0.2-2μm). It can be applied in the field of optics and fusion reactors as an insulator, and as the optical window. Silcon dioxide is a Widely Used In photoelectric material. In the reactor and space radiation Environments, Long-term radiation generated irradiation damage of high flux neutron and other particles influence material performance, even bring about accident happening. Low energy ion implantation and high energy heavy ion irradiation are conducive to simulate internal structure change of Al2O3and SiO2irradiated neutron and space radiation. Therefor, irradiation damage, internal structure and optical characteristics of Al2O3and SiO2become important topic of photoelectric material and device development application.In the present work the photoluminescence (PL) character of sapphire irradiated with inert gases ions and high energy heavy ions were studied. Such as sapphire were implanted with110keV He+, Ne+and Ar+ions,600keV,2MeV and4MeV Ar ions, or180keV,460keV,3MeV and6MeV Xe23+ions. Such as sappires were implanted with110keV He ions and irradiated by Pb27+ions with energy of230MeV and subsequently annealed at600,900and1100K. Sapphires were irradiated with230MeV Pb7+and308MeV Xe23+ions. As well as SiO2single crystals irradiated with600keV,2MeV,4MeV,95MeV Ar ions,600keV,4MeV,5MeV Kr ions,400keV,3MeV Xe ions and400keV,1MeV,3MeV,5MeV,7MeV Eu ions. Optical Characteristics and internal structure change were investigated by Infrared spectrum, fluorescence spectroscopes, Raman spectrum and TEM. Photoluminescence character of color centers created in Al2O3or SiO2crystals under room temperature irradiation with keV-MeV ions shows several characteristic phenomena. In the low-energy regime, single ion tracks are well separated and the damage process is dominated by the formation of simple color centers such as F and F2color centers. For the high energy ions, the energy density in ion tracks produced at high stopping power is larger, and consequently the defect concentration increases significantly. At higher defect densities, various complex defects embedded in the Al2O3or SiO2are more likely to cause three primary colors luminescence of Samples irradiated. |
