Photoluminescence Research Of Several Kinds Of Electro-optical Crystal By Er³⁺ Irradiation

Rare-earth element is usually used as luminescence center by doped into other materials, for its rich photo-electro-magnetic properties. Especially, when electronic transition between energy levels happens, Er3+is able to emit fluorescence of wavelength around1.53μm, which is also the lowest loss wavelength of silica based optical fiber communication. Amplification of the signal light at wavelength around1.53μm can be achieved by optical amplifier with erbium-doped. Moreover, because the transition of electrons on4f are protected by the outer layer, the fluorescence wavelength of Er3+is not sensitive to external conditions. Therefore, the studies of Er3+-doped luminescent materials have important practical significance.Contents of this article include preparation of erbium-doped SiO2crystal, SiO2glass, KTP, RTP, and SiC by ion irradiation; analysis of Er3+distribution and fluorescence in the substrate; studying the photolumimescence of erbium-doped materials by lattice and defects through the spectra analysis of the samples after annealing treatment; preparing single-mode waveguide by nickel ion implaned into Nd3+-doped silicate glass, studing the change of the refractive index of the substrate after ion irradiation, and also measured the dark model, near field intensity distribution and transmission loss of the single-mode waveguide. The main conclusions of this paper are:(1) Used the energy of500KeV, and dose of3×1015cm-2to prepare erbium-doped SiO2crystal and SiO2glass samples by ion irradiation, and the photolumimescence spectrum under room and12K temperature all showed photoluminescence peak around the wavelength of1.53μm, annealing enhanced the photolumimescence intensity of erbium-doped SiO2glass at room temperature, while resulted that the photolumimescence intensity of the SiO2crystal decreased under12K, the reason was that annealing result recrystallization of erbium-doped SiO2crystal, which makes Er3+decrease, and then reduces the Er3+photolumimescence efficiency.(2) Prepared the erbium-doped KTP and RTP samples with ion implantation by the energy of500KeV and dose of3×1015cm-2, the photolumimescence spectrum of rbium-doped KTP under room and12K temperature all showed a photoluminescence peak with strong intensity at the wavelength around1.53μm, while erbium-doped RTP only showed a weak peak under12K, the reason is that Er3+combine with K+to become effective luminous center is easier Er3+combine with Rb+. Erbium-doped KTP and RTP after annealing treatment showed fluorescence quenching at room temperature, we speculate that annealing treatment change the defect types and characteristics, which lead to the radiative transition of excited state Er3+, and reduce the activation concentration of Er3+(3) Prepared erbium doped SiC samples with ion implantation by energy of280KeV and dose of5×1013cm-2,1×1014cm-2and5×1014cm-2, the photolumimescence spectrum of rbium-doped SiC under the low temperature of12K all showed photoluminescence peak at the wavelength around1238nm, while the fluorescence emission near1.53μm not appeared, we speculate that in the process of Er3+irradiation introduced some deep level defects, which Induced electronic transitions between the energy levels of S3/2and I11/2become the dominant factor, and emitted fluorescence around the wavelength of1238nm while inhibited the1.53μm emission of Er3+(4) Using energy of3.0MeV, dose of5.0×1014cm-2to prepare single-mode waveguide of Nd3+-doped silicate glass with refractive index increase by Nd3+implantation, The waveguide does not exist leak mode, near-field modal profiles (TEmode) of the waveguide by end-fire coupling is uniformly brightm, which suggested that the single-mode waveguide with a low transmission losss. Back-Reflection method for single-mode waveguide transmission loss measurements showed that the propagation loss of the waveguide after annealing reduced to0.6dB/cm, and this has practical value in the field of communication.