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Study On Key Technologies Of Monolithic Photonic Integration And Widely Tunable Laser Diode

Posted on:2010-01-25Degree:DoctorType:Dissertation
Country:ChinaCandidate:S JiangFull Text:PDF
GTID:1118360308957459Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
Monolithic photonic integration is the most important evolution trend for optical fiber communication devices. A lot of basic problems need to be solved eagerly, such as the compatibilities among the material, structure and related processing, etc. As a typical monolithic photonic integrated circuit (PIC), widely tunable laser diodes play a more and more important role in intelligent optical networks.In this dissertation, several key technologies used for the manufacturing of PIC devices, have been investigated which including MOCVD butt-joint regrowth, low damage ICP etching and ridge waveguide structure fabrication; comprehensive studies have been carried out on the structure design and parameters optimization for SGDBR tunable laser diode, a prototype device has been fabricated and its performance has been tested; the dynamic characteristics of SGDBR tunable laser diode has been simulated using a flexible and efficient model.In order to realize butt coupling between active and passive waveguide with low loss and reflection, the butt joint interface profile and MOCVD regrowth processing have been optimized carefully, and finally an improved butt-joint regrowth with high quality has been achieved sucessfully. Using integrated passive waveguide FP laser, the extracted internal modal loss of the mirror and phase section is 7 cm-1. The residual reflection at the butt-joint interface is as low as 10-4 tested by precision reflectmeter.Using specially designed InGaAsP/InP MQW structure, the damage effects of Cl2/H2 ICP etching was studied, and the key processing parameters for low damage ICP etching have been optimized. An effective method for the fabrication of Bragg grating with low damage, high quality surface has been obtained. A 1.55μm InGaAsP DFB laser has been fabricated using above optimal parameters.An optimized ridge waveguide (RWG) processing used for the lateral confinement of active photonic devices has been proposed. Combined with integrated unpumped absorber, bent waveguide and facet AR coating, a 1.3μm AlGaInAs superlumunescient diode with high output power and high reliability has been fabricated. And this also verifies the stability and reliability of above RWG processing.With systematically comprehensive studies of the design of the active region, passive waveguide region, lateral confinement structure and SGDBR mirrors, a set of optimized parameters for SGDBR tunable laser diode has been obtained. The complete processing flow for the fabrication of SGDBR laser has been set up. The fabricated device features that quasi-contunious wavelength tunable range is more than 40nm and the side mode suppression ratio (SMSR) is higher than 30dB within the whole tuning range.Based on digital filter approach, a flexible and efficient model for the dynamic characteristics'simulation of diode laser cascaded with complicated passive structure has been developed, and its effectiveness and efficiency has been verified. The behaviors of wavelength switching of SGDBR laser, which include transient spectrum and mode competition, have been studied in detail using this model. A new efficient approach has been proposed to shorten the switching time and reduce the channel crosstalk for SGDBR laser's wavelength switching.
Keywords/Search Tags:monolithic photonic integrated circuit, MOCVD butt-joint regrowth, ICP etching, SGDBR tuanble laser diode, digital filter
PDF Full Text Request
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