| In the layer of optical internet information transportation, DWDM has become the chief technology. And the combination of the mobile, satellite and optical communications is the certain trend. Photonic Integrate Circuits (PICs) and Optical Electronic Integrate Circuits (OEICs) are the key module of all kinds of communication backbone net and terminal devices. Using the nonlinear effect of exciton absorption in Multiple Quantum Well (MQW) made ofⅢ-Ⅴfamily semiconductor, we can fabricate kinds of low power consumption and ultra high speed Planar Lightwave Circuit (PLC). This can be the fundament of PICs and OEICs. InⅢ-Ⅴfamily MQW-PLC,two important unit devices are studied: the Optical Modulator/Switch and Resonator Filter (RF). The work include theory analysis, optimization, material growth, graphic process, sample fabricate and test analysis.In the first chapter, the development of optical networks and microwave photonic system is reviewed as well as the application of PLC and PICs in the system. The research progress of all kinds of planar waveguide high speed optical modulators and optical filters are reviewed, the performance ,technics and analysis method ofⅢ-Ⅴfamily MQW are estimated. The plan and idea of deep research work are brought forward.The second chapter is mainly about Time Domain-Finite Difference-Beam Propagation Method (TD-FD-BPM), Finite Difference in Time Domain (FDTD) and the boundary conduction of medium optical waveguide, Perfect match Layer (PML) absorption boundary conduction. The founding of 2D and 3D planar optical waveguide numerical value simulation module and platform supplies a convenient tool for the optimization of MQW-OM/S and RF optical transmit way. In the third chapter, the optical excitation, resonance and loss in high index contrast planar single resonator are discussed in detail. The analysis module and the explicit expressions to main performance parameters of all kinds of resonate cavities are given. The theory of four ports resonate cavity is founded and the transmission coefficients of four ports are given. The ridge waveguide parameters and coupling way of GaAs/GaAlAs double heterojunction (DH) and InP/InGaAsP-MQW are selected. Optimizing the GaAs/GaAlAs-DH symmetrical double rectangles and four rectangles parallel connected standing wave RFs as well as single and series connected racetrack resonators, and GaAl/InGaAs-MQW single ring, InP/InGaAsP-MQW singlerectangle and mixed RFs. Multiple Mode Interference (MMI) waveguide is viewed as a rectangular resonator for the first time, and it can be used as multiple mode interference and resonator. Resonator filter system with multiple direction transmission ways and interface is proposed for the first time, and numerical value simulation confirms this.In the fourth chapter, on the demand ofⅢ-ⅤMQW-OM/S design, the physical characters of MQW are systematically discussed. The relationship between electroabsorption and MQW structure parameters is analysed and InP/InGaAsP-MQW waveguide structure is designed. The optical transmission analysis of InP/InGaAsP-MQW ridge waveguide and the unit device is given.The Traveling Wave (TW) electrode quasi-static and direct time domain module are established, and the traveling wave modulate character is analysed in detail. This is the theory base of confirming the inter effect location and the design as well as fabrication and test of traveling wave electrode. A novel structure of 2×1 optical double waves combine planar waveguide OM/S unit device, which can serves as a modulator for two optical signal, is presented.Technology of Molecular Beam Epitaxy (MBE) is introduced in chapter five. InGaAsP/InP strain MQW and the relevant cladding layer are fabricated based on inland top levelⅢ-Ⅴsemiconductor processing line. Under temperature of 10K, the PL spectrum and double-crystal diffraction are taken measurement. The results show, that the band gap wavelength in well layer is 1520 nm, and the period of well layers is 17.1±0.3 nm, which accord with the label value. The quantum well layer has a good quality interface and is matching with the substrate. The material is suit for electroabsorption modulator/switch.In chapter six, the processing flow forⅢ-Ⅴsemiconductor MQW planar waveguide is established, a new method to fabricate metal electrode is proposed to solve the fabrication problem. Seven kinds of planar waveguide RFs and two kinds of OM/S are manufactured on inland advanced processing line. The international advanced 81910A photon all parameters test system is established, which can provide efficient coupling for naked chip and single mode fiber. The naked chips of nine kinds of devices are tested for optical and static performance in lab. The results show a good unification with simulating result. When InP/InGaAsP-MQW-MZ-OM/S under a bias of 1.2-1.8V voltage, there is a strong electroabsorption effect, optical power varies 0.33/V. The MMI rectangular RF gets a better output than normal RF. InP/InGaAsP-MQW mixed RF of single rectangular and ring shows better performance than unmixed RF.
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