Tin Oxide And Antimony Doped Film Preparation, Structure, And Photoluminescence Properties

Semiconductor light emitting device was widely used in many fields. The wide band gap semiconductor was paid more and more attention along with the GaN and ZnSe as wide band gap semiconductor blue light emitting devices were successfully invented. SnO₂ is a wide band gap semiconductor material with direct band gap. Its band gap is 3.62eV at room temperature. Compared with other wide band gap semiconductor materials, SnO₂ had more good property such as wider band gap, higher exciton bind energy (130meV at room temperature), lower deposition temperature and more steady physical and chemical property. SnO₂ is a new material with ultra-violet, violet and blue light emitting property. If we had studied the photoluminescence property and emission mechanism of SnO₂ thorough, we would obtained the SnO₂ films with steady emitting property.The SnO₂ films are polycrystalline in nature with tetragonal rutile crystal structure and have preferred orientation of a certain direction. The SnO₂ crystal presented n-type semiconductor nature due to the oxygen vacancies existence, which caused two donor levels about 0.03eV and 0.15eV below the conduction band minimum respectively. The optical band gap for SnO₂ was about 3.87 ～ 4.3eV that enabled the SnO₂ film to had the high transmissibility in the visible light region. The SnO₂ films has high reflection in infrared region (plasma edge was about 3.2μ m) because it's high current carrier density.There is not enough study for photoluminescence of SnO₂. The most studies of emission property were the emission property at low temperature and of nanometer material. The emission mechanism was not clear. There were not articles of other groups about studies for the photoluminescence of SnO₂ and its doping films at room temperature yet.In this paper, pure SnO₂ films and Sb doped SnO₂ films were prepared with atmospheric pressure chemistry vapor deposition method (APCVD) and the radio...